| PART |
Description |
Maker |
| M58LR128KT855 M58LR256KT855 M58LR128KT705 M58LR256 |
128 or 256 Mbit (】16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
| M58LT128HSB8ZA6 M58LT128HSB8ZA6E M58LT128HSB8ZA6F |
128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories
|
Numonyx B.V
|
| HYE25L128160AC-8 HYB25L128160AC-75 |
128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES 128 - Mbit同步低功率DRAMCHIPSIZE套票
|
Infineon Technologies A...
Infineon Technologies AG
|
| M58LR128GU |
The M58LR128GU/L and M58LR256GU/L are 128 Mbit (8 Mbit x16) and 256 Mbit (16 Mbit
|
ST Microelectronics, Inc.
|
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
| M39P0R9070E0ZADF M39P0R9070E0 M39P0R9070E0ZAD M39P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| HYB25L128160AC HYE25L128160AC-8 HYB25L128160AC-75 |
128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES
|
INFINEON[Infineon Technologies AG]
|
| CY62136ESL-45ZSXI CY62136ESL1106 |
2-Mbit (128 K x 16) Static RAM Ultra low standby power
|
Cypress Semiconductor
|
| M58PR512LE M58PR512LE96ZAC5 M58PR512LE96ZAD5 M58PR |
512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
| M48Z129V-70PM1 M48Z129V-85PM1 M48Z129Y-70PM1 M48Z1 |
5.0 V or 3.3 V, 1 Mbit (128 Kb x 8) ZEROPOWER庐 SRAM
5.0 V or 3.3 V, 1 Mbit (128 Kb x 8) ZEROPOWER? SRAM
|
STMicroelectronics
|
| M36P0R9070E0 |
512 Mbit Flash memory 128 Mbit (Burst) PSRAM
|
Numonyx
|
| M36P0R8070E0 |
256 Mbit Flash memory 128 Mbit (burst) PSRAM
|
Numonyx
|
