| PART |
Description |
Maker |
| HYS72V2200GU-10 HYS72V2200GU-8 HYS64V2200GU-10 HYS |
Network Cable Assembly; Connector Type A:T568A/B Modular Plug; Connector Type B:T568A/B Modular Plug; Cable Length:7ft; Approval Categories:Augmented Category 6 standards; cord color per TIA/EIA-606 standard RoHS Compliant: Yes
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 72 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
KPT 3C 3#20 SKT PLUG 3.3 2米x 64/72-Bit一银行内存模块3.3 4米64/72-Bit 2银行内存模块
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
SIEMENS A G
|
| MB85343C-70 |
CMOS 1M×32 BIT
Hyper Page Mode DRAM Module(CMOS 1M×32位超级页面存取模式动态RAM模块)
CMOS 1M×32 BIT Hyper Page Mode DRAM Module(CMOS 1M×32位超级页面存取模式动态RAM模块) 的CMOS 100万32位的超页模式内存的CMOS00万32位超级页面存取模式动态内存模块）
|
Fujitsu Limited
Fujitsu, Ltd.
|
| HYM368020GS-60 HYM368020S-60 Q67100-Q985 HYM368020 |
8M x 36 Bit FPM DRAM Module with Parity
8M x 36 Bit DRAM Module with Parity
8M x 36-Bit Dynamic RAM Module 8M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
8M x 36-Bit Dynamic RAM Module 8米36位动态随机存储器模块
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| MB8504D064AA-70 MB8504D064AA-60 |
CMOS 4M×64 BIT
Hyper Page Mode DRAM Module(CMOS 4M×64 位超级页面存取模式动态RAM模块)
|
Fujitsu Limited
|
| HYM364025GS-60 HYM364025GS-50 HYM364025S-60 HYM364 |
4M x 36-Bit EDO - DRAM Module 4米36位EDO公司-记忆体模
4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 60 ns, SMA72
4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 50 ns, SMA72
4M x 36 Bit EDO DRAM Module with Parity
|
INFINEON TECHNOLOGIES AG
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| HYM536410 |
4M x 36-Bit CMOS DRAM Module
|
Hyundai
|
| HYM536410B |
4M x 36-Bit CMOS DRAM Module
|
Hyundai
|
| HYM72V2005GU-60 HYM72V2005GU-50 HYM64V2005GU-60 HY |
3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
2M x 72 Bit ECC DRAM Module unbuffered
2M x 64 Bit DRAM Module unbuffered
3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module 2M X 72 EDO DRAM MODULE, 60 ns, DMA168
|
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| HYM72V1625GS-60 HYM72V1625GS-50 HM72V166 HYM72V162 |
16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 50 ns, DMA168
16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
16M x 72-Bit EDO-DRAM Module (ECC - Module)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| KMM594000-10 KMM594000-8 KMM594000 |
4M x 9 CMOS DRAM Memory Module 4米9的CMOS DRAM记忆体模
4M x 9 CMOS DRAM SIMM Memory Module
|
Samsung Semiconductor Co., Ltd.
Samsung Electronics
|
| HYM328020GD-60 HYM328020GD-50 |
8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE 8M X 32 FAST PAGE DRAM MODULE, 60 ns, ZMA72
8M x 32 Bit DRAM Module (SO-DIMM)
-8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
