| PART |
Description |
Maker |
| LC321667BJ LC321667BM LC321667BT-70 LC321667BT-80 |
1 MEG (65536 words X 16 bits) DRAM EDO Page Mode / Byte Write
1 MEG (65536 words X 16 bits) DRAM EDO Page Mode, Byte Write???
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| TMM2018AP TMM2018AP-25 TMM2018AP-35 TMM2018AP-45 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply 16,384位高速，低功耗静态随机存取记2048字由8位，V电源供电
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| CAT24FC02ZITE13REV-F CAT24FC02 CAT24FC02GLETE13REV |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
CAP 0.22UF 25V 80-20% Y5V SMD-0805 TR-7 PLATED-NI/SN
RELAY, DPDT, 4.5V, SMD
SWITCH 4 POS DIP
LM5100A/B/C LM5101A/B/C 3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers; Package: LLP; No of Pins: 10
IC EXTRACTOR TOOL
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
|
CATALYST[Catalyst Semiconductor]
Pulse Research Lab
|
| EDD2516AKTA-5-E EDD2516AKTA-5C-E |
256M bits DDR SDRAM (16M words x16 bits, DDR400)
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| EDD2508AKTA-5C EDD2508AKTA-5 EDD2508AKTA-5B |
256M bits DDR SDRAM (32M words x 8 bits, DDR400)
|
ELPIDA[Elpida Memory]
|
| EDX5116ABSE-4C-E EDX5116ABSE EDX5116ABSE-2A-E EDX5 |
512M bits XDR DRAM (32M words x16 bits)
|
ELPIDA[Elpida Memory]
|
| EDS1232CASE-1A-E EDS1232CASE-1AL-E |
ER 8C 7#16 1#12 PIN RECP LINE 4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
128M bits SDRAM (4M words x 32 bits) 128兆位的SDRAM分字× 32位）
|
Elpida Memory, Inc.
|
| EDD1232AAFA-7A-E EDD1232AAFA EDD1232AAFA-6B-E |
128M bits DDR SDRAM (4M words x 32 bits)
|
ELPIDA[Elpida Memory]
|
| EDD1216AATA EDD1216AATA-6B-E EDD1216AATA-7B-E EDD1 |
128M bits DDR SDRAM (8M words x 16 bits)
|
http://
ELPIDA MEMORY INC
Elpida Memory, Inc.
|
