| PART |
Description |
Maker |
| PF08127B E2081606PF08127B E2081606_PF08127B |
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone
|
ETC[ETC]
RENESAS[Renesas Electronics Corporation]
|
| E2081606PF08127B |
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone 场效应晶体管功率放大器模块，电子GSM和DCS1800/1900三频手持电话
|
Renesas Electronics, Corp.
|
| FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited.
Fujitsu, Ltd.
Fujitsu Limited
|
| BGY284 |
Power amplifier with integrated control loop for GSM850, EGSM900, DCS1800 & PCS1900
|
NXP Semiconductors
Philips Semiconductors
|
| FLU17XM |
L-Band Medium & High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| SM1920-47L |
1900-2000MHz 50 Watt Linear Power Amplifier
|
Stealth Microwave, Inc.
|
| HMC368LP406 HMC368LP4 368LP4E |
SMT GaAs PHEMT MMIC AMP-DOUBLER-AMP, 9.0 - 16.0 GHz OUTPUT
|
Hittite Microwave Corporation
|
| SM1920-47LQ |
1900-2000MHz 50 Watt Linear Power Amplifier FOR PCS APPLICATIONS
|
Stealth Microwave, Inc.
|
| DS52-0005-TR DS52-0005 DS52-0005-RTR |
Low Cost Two-Way SMT Power Divider 1700 - 1900 MHz
|
MACOM[Tyco Electronics]
|
| MAAM-007219-000000 |
3.6 V, 450 mW DECT RF Power Amplifier IC 1880 - 1900 MHz 3.6 V的，450毫瓦的DECT射频功率放大器IC 1880900年兆
|
NXP Semiconductors N.V.
|
| PF0415 PF0415A |
MOS FET Power Amplifier Module for PCS 1900 Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
