| PART |
Description |
Maker |
| 39504 |
Section 4. Architecture
From old datasheet system
|
Microchip Technology Inc.
MICROCHIP[Microchip Technology]
|
| CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1474BV33-200BGC |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V 1M X 72 ZBT SRAM, 3 ns, PBGA209
|
Cypress Semiconductor, Corp.
|
| BBF2805SE BBF2815S BBF2812S BBF2805SK BBF2803SH BB |
3.3V, 20W DC-DC converter
15V, 20W DC-DC converter
12V, 20W DC-DC converter
Analog IC
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL™ Architecture
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture
20W DC-DC Converter(输出功率20WDC-DC转换
|
M.S. Kennedy Corp.
M.S. Kennedy Corporation
|
| CY7C1418AV18-267BZC |
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
|
CYPRESS SEMICONDUCTOR CORP
|
| MAX8890 MAX8890ETCGGG MAX8890ETCMMM MAX8890ETCDDD |
2.9 V, integrated cellular RF-section power-management IC
2.8 V, integrated cellular RF-section power-management IC
Integrated Cellular RF-Section Power-Management IC 集成的蜂窝电RF部分电源管理IC
1.8 V, integrated cellular RF-section power-management IC
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
|
| M5LV-256_104-10VC M5LV-256_104-10VI M5LV-256_104-1 |
7ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device)
20ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device)
10ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device)
12ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device)
15ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device)
|
LATTICE[Lattice Semiconductor]
|
| DAT15073 |
Attenuator 1 Section
|
DAICO[DAICO Industries, Inc.]
|
| CY7C1379B-117AC CY7C1379B-117BZC CY7C1379B |
9-Mbit (256K x 32) Flow-through SRAM with NoBL(TM) Architecture
9-Mbit (256K x 32) Flow-through SRAM with NoBL⑩ Architecture
9-Mbit (256K x 32) Flow-through SRAM with NoBL垄芒 Architecture
9-Mbit (256K x 32) Flow-through SRAM with NoBL Architecture
|
Cypress Semiconductor
|
| DA0887 |
GaAs 7 Section Attenuator
|
DAICO[DAICO Industries, Inc.]
|
| DA0996 |
GaAs 6 Section Attenuator
|
DAICO[DAICO Industries, Inc.]
|
