| PART |
Description |
Maker |
| 2SK3074 EE08686 |
N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)
From old datasheet system
RF POWER MOSFET FOR VHF - AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| MGF7176C 7176C |
3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER
From old datasheet system
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 2SC5088 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOESE AMPLIFIER APPLICATIONS)
VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| S-AU83L |
FM RF POWER AMPLIFIER MODULE for UHF BAND
|
Toshiba Semiconductor
|
| 2SC2641 |
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC4320 E000939 |
From old datasheet system
VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
NPN EPITAXIAL PLANAR TYPE (VHF~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| EC3H02B |
VHF to UHF Low-Noise Wide-Band Amplifier Applications 甚高频到超高频低噪声宽带放大器应
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| 2SK3074 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF-BAND POWER AMPLIFIER
|
TOSHIBA
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| SUR522H S-AU50H |
UHF BAND FM POWER AMPLIFIER MODULE HAND-HELD TRANSCEIVER UHF频段调频功率放大器模块，手持式收发器
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
