| PART |
Description |
Maker |
| IRFBG30 |
1000V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=1000V, Rds(on)=5.0ohm, Id=3.1A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=1000V/ Rds(on)=5.0ohm/ Id=3.1A)
|
IRF[International Rectifier]
|
| Z4GP210-HF |
Lead less chip form, no lead damage, Low power loss, High efficiency
Halogen Free Bridge Rectifiers, V<sub>RRM</sub>=1000V, V<sub>DC</sub>=1000V, I<sub>AV</sub>=2A
|
Comchip Technology
|
| STU6NA100 6003 |
N - CHANNEL 1000V - 1.45ohm - 6A - Max220 FAST POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL 1000V - 1.45 - 6A - Max220 FAST POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| 04F6326 04F8828 04F8908 04F8804 |
WIDERSTAND DRAHT EMAILL 2R0 1000V 300W
WIDERSTAND DRAHT EMAILL 3R1 1000V 300W
WIDERSTAND DRAHT EMAILL 8R0 1000V 300W WIDERSTAND线材EMAILL 8R0 1000V 300W
WIDERSTAND DRAHT EMAILL 10R0 1000V 300W
|
Electronic Theatre Controls, Inc.
|
| APT10050JN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV 1000V 20.5A 0.50 Ohm
|
Advanced Power Technology
|
| Z4GP210L-HF |
Halogen Free Bridge Rectifiers, V<sub>RRM</sub>=1000V, V<sub>DC</sub>=1000V, I<sub>AV</sub>=2A
|
Comchip Technology
|
| APT10086BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 13A 0.860 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT10040B2VR APT10040LVR |
POWER MOS V 1000V 25A 0.400 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| SF38 SF39 SF310 SF37 |
POWER RECTIFIERS(3.0A,500-1000V)
|
MOSPEC[Mospec Semiconductor]
|
| SU19 SU110 SU17 SU18 |
POWER RECTIFIERS(1.0A,500-1000V)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
