| PART |
Description |
Maker |
| IRF530_D ON0283 IRF530-D IRF530/D |
100V4A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管（N沟道增强型硅门）)
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| RFP12N08L RFM12N10L RFP12N10L |
N-Channel Logic Level Power Field-Effect Transistors (L2 FET)
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| MTD2955E MTD2955ET4 |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount
|
ON Semiconductor
|
| MTV6N100E MTV6N100E_D ON2675 MTV6N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTV25N50E MTV25N50E_D ON2672 MTV25N50E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
TMOS POWER FET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| 2SJ498 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss.
|
Isahaya Electronics Corporation
|
| 2SJ625 2SJ625-T1B 2SJ625-T2B |
Pch enhancement type MOS FET
MOS FIELD EFFECT TRANSISTOR
|
NEC[NEC]
|
| 2SK3479-Z-E1-AZ 2SK3479-15 |
SWITCHING N-CHANNEL POWER MOS FET
MOS FIELD EFFECT TRANSISTOR
|
Renesas Electronics Corporation
|
| NP80N03ELE07 NP80N03ELE-E1-AY NP80N03ELE-E2-AY NP8 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
|
NEC Corp.
|
| NP88N075KUE NP88N075KUE-E1-AY NP88N075KUE-E2-AY NP |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
|
NEC Corp.
|
| NP80N04NHE NP80N04NHE-S18-AY NP80N04DHE NP80N04DHE |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
|
NEC
|
