| PART |
Description |
Maker |
| 2SC4666 E000970 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY AMPLIFIER/ SWITCHING APPLICATIONS)
NPN EPITAXIAL TYPE (AUDIO FREQUENCY AMPLIFIER SWITCHING APPLICATIONS)
From old datasheet system
AUDIO FREQUENCY AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS
NPN EPITAXIAL TYPE (AUDIO FREQUENCY AMPLIFIER, SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC311303 2SC3113 |
Transistor Silicon NPN Epitaxial Type For Audio Amplifier and Switching Applications
|
Toshiba Semiconductor
|
| 2SC2459 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Amplifier Applications
|
TOSHIBA
|
| HN1B01F E001967 |
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC4207 E000914 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| 2SC3112 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications
|
TOSHIBA
|
| 2SC2120 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Power Amplifier Applications
|
TOSHIBA
|
| 2SC4118 2SC411807 |
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications
|
Toshiba Semiconductor
|
| HN1B01FU07 |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC4116 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
