| PART |
Description |
Maker |
| TSHG5510 |
High Speed Infrared Emitting Diode
|
Vishay Siliconix
|
| TSHF5200 |
High Speed IR Emitting Diode in 5 mm (T-13/4) Package
|
TFUNK[Vishay Telefunken]
|
| SE1103 |
High Speed Infrared Light Emitting Diode
|
NEC Electronics
|
| NTE3017 |
Infrared Emitting Diode High Speed for Remote Control
|
NTE Electronics
|
| VSMB1940X01 |
High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| VSMF3710 VSMF371009 |
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| VSMY3850-GS08 VSMY3850-GS18 |
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
| TSHF5200 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSHG8400 TSHG840009 |
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
|
http:// Vishay Siliconix
|
| TSFF5210 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
VISAY[Vishay Siliconix]
|
| TSMF3710 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Intertechnology,Inc.
|
| VSMY3940X01-GS08 VSMY3940X01-GS18 |
High Speed Infrared Emitting Diode, 940 nm,Surface Emitter Technology
|
Vishay Siliconix
|