| PART |
Description |
Maker |
| MX29F100T_B 29F100TB |
1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
From old datasheet system
|
Macronix 旺宏
|
| K6R1016V1D-UI10 K6R1004C1D-JC10 K6R1004C1D-JI10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32
256K X 4 STANDARD SRAM, 8 ns, PDSO32
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静RAM.3V的）在商业和工业温度范围操作
TV 23C 21#20 2#16 SKT PLUG REC
64Kx16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges
64Kx16 bit high-speed CMOS static RAM(3.3V Operaing) operated at commercial and industrial temperature ranges
TV 55C 55#22D SKT PLUG RECP
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K6R1016C1D-JECII10/12 K6R1016V1D-JTICI08/10 K6R101 |
64K*16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges
128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating) Data Sheet
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 在商业和工业温度范围运作64Kx16位高速CMOS静态RAM3.3V的）
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静态RAM.3V的）在商业和工业温度范围操作
|
Samsung Electronic
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6R1004C1D-JCI10_12 K6R1004C1D-JCI10 K6R1004C1D-JC |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| W29EE011Q-90 W29EE011-15B W29EE011Q-15 W29EE011P90 |
EEPROM|FLASH|128KX8|CMOS|DIP|32PIN|PLASTIC
EEPROM|FLASH|128KX8|CMOS|LDCC|32PIN|PLASTIC 的EEPROM | FLASH动画| 128KX8 |的CMOS | LDCC | 32脚|塑料
EEPROM|FLASH|128KX8|CMOS|TSSOP|32PIN|PLASTIC 的EEPROM | FLASH动画| 128KX8 |的CMOS | TSSOP封装| 32脚|塑料
|
Winbond Electronics, Corp.
TE Connectivity, Ltd.
|
| WMS128K8-17FEMA WMS128K8-17FMA WMS128K8-35CLC WMS1 |
SRAM|128KX8|CMOS|FP|32PIN|CERAMIC 静态存储器| 128KX8 |的CMOS |计划生育| 32脚|陶瓷
SRAM|128KX8|CMOS|FP|36PIN|CERAMIC 静态存储器| 128KX8 |的CMOS |计划生育| 36PIN |陶瓷
SRAM|128KX8|CMOS|SOJ|32PIN|CERAMIC 静态存储器| 128KX8 |的CMOS | SOJ | 32脚|陶瓷
SRAM|128KX8|CMOS|LLCC|32PIN|CERAMIC 静态存储器| 128KX8 |的CMOS | LLCC | 32脚|陶瓷
|
Renesas Electronics, Corp.
AUK, Corp.
Raltron Electronics, Corp.
Electronic Theatre Controls, Inc.
Epson (China) Co., Ltd.
|
| KM684000ALG-5 KM684000ALGI-7L KM684000ALP-7 K6T100 |
128Kx8 bit Low Power CMOS Static RAM
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:AC; No. of Contacts:3; Connector Shell Size:14S; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight; Circular Contact Gender:Pin
128Kx8 bit Low Power CMOS Static RAM 128Kx8位低功耗CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| N01M083WL1A |
1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| AM29LV001BB-45RFI AM29LV001BB-45RFIB AM29LV001BB-4 |
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1兆位28亩8位）的CMOS 3.0伏，只引导扇区闪
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 8 FLASH 3V PROM, 55 ns, PDSO32
64KX16,TSOP(II)44,IND,SRAM
|
http://
Advanced Micro Devices, Inc.
|
| 28C16A-20/VS 28C16A-20/TS 28C16A-20I/VS 28C16AF-20 |
Quad, Serial, 8-Bit DACs with Rail-to-Rail Outputs
128Kx8 EEPROM 128Kx8 EEPROM
2A, 76V, High-Efficiency MAXPower Step-Down DC-DC Converters x8的EEPROM
|
Maxim Integrated Products, Inc.
|
| CY7C1021BV33-8BAC |
SRAM,64KX16,CMOS,BGA,48PIN,PLASTIC
From old datasheet system
|
Cypress Semiconductor Corp
|
