| PART |
Description |
Maker |
| TIM1414-8-252 |
HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| LD7111 LD7111SERIES |
DBS-Band, 1.7KW Klystrons for Communications
17 GHz BAND, 1.7 kW, HIGH EFICIENCY, HIGH POWER GAIN
17 GHz BAND / 1.7 kW / HIGH EFICIENCY / HIGH POWER GAIN
|
NEC[NEC]
|
| EL0096 |
High Power Limiters 12 GHz to 18 GHz
|
Micronetics, Inc.
|
| EL0095 |
High Power Limiters 8 GHz to 12 GHz
|
Micronetics, Inc.
|
| ES0314-20 |
High Power Switch 2 GHz to 18 GHz
|
Micronetics, Inc.
|
| EL0092 |
High Power Limiters 0.15 GHz to 0.45 GHz
|
Micronetics, Inc.
|
| ES0309-10 |
High Power Switch 0.1 GHz to 1 GHz
|
Micronetics, Inc.
|
| TSDF1920W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise;
25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| 310-025103-012 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-024103-022 024103-022 |
Filtered Low Noise Ampli er
|
API Technologies Corp
Spectrum Microwave, Inc.
|
| 310-024105-021 024105-021 |
Filtered Low Noise Ampli er
|
API Technologies Corp
Spectrum Microwave, Inc.
|
