| PART |
Description |
Maker |
| K7R321884M K7R321884M-FC16 K7R321884M-FC20 K7R3218 |
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM
1Mx36 & 2Mx18 QDRTM II b4 SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7J643682M07 K7J641882M |
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
|
Samsung semiconductor
|
| IS61DDPB42M36A/A1/A2 IS61DDPB44M18A IS61DDPB44M18A |
4Mx18, 2Mx36 72Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| K7N641845M K7N641845M-FC16 K7N641845M-FC25 K7N6418 |
2Mx36 & 4Mx18 Pipelined NtRAM
|
Samsung semiconductor
|
| K7Q161852A |
(K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM
|
Samsung semiconductor
|
| CY7C1911CV18 |
(CY7C1x1xCV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1911BV18 |
(CY7C1x1xBV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor
|
| K7R161882B K7R163682B K7R160982B |
512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM
512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM 512Kx36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| AS5C2568 AS5C2568DJ-20_XT AS5C2568DJ-12_883C AS5C2 |
SRAM
32K x 8 SRAM SRAM MEMORY ARRAY
SRAM 静态存储器
|
ETC
AUSTIN[Austin Semiconductor]
Electronic Theatre Controls, Inc.
|
| HY6264 HY6264-10 HY6264-12 HY6264-15 HY6264-70 HY6 |
8KX8-Bit CMOS SRAM
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDSO28
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDIP28
x8 SRAM 8K X 8 STANDARD SRAM, 85 ns, PDSO28
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
