| PART |
Description |
Maker |
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSYA254R4 FSYA254D FSYA254D1 FSYA254D3 FSYA254R FS |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 21 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HCTS365MS HCTS365D HCTS365DMSR HCTS365HMSR HCTS365 |
Radiation Hardened Octal D-Type Flip-Flop/ Three-State/ Positive Edge Triggered
Radiation Hardened Hex Buffer/Line Driver Non-Inverting 辐射硬化六角缓冲线路驱动器非反相
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| IRHE9230 IRHE93230 2048 |
200V, P-Channel Surface Mount Radiation Hardened Power MOSFET(200V,P沟道表贴型抗辐射功率MOS场效应管) 00V，P通道表面安装抗辐射功率MOSFET00V的电压，P沟道表贴型抗辐射功率马鞍山场效应管）
From old datasheet system
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
|
International Rectifier, Corp.
|
| 5962D9567002VCA 5962D9567002VCC 5962D9567002VGA HS |
Low Power, High Performance Radiation Hardened Operational Amplifier OP-AMP, 1 MHz BAND WIDTH, CDIP14
CAP 47UF 4V 25V TANT SMD-7343-43 TR-7 LOWESR-100
CONNECTOR ACCESSORY
Low Power/ High Performance Radiation Hardened Operational Amplifier
|
Intersil, Corp.
Intersil Corporation
|
| 5962F9853501VEC 5962F9853501VXC ACTS138D ACTS138DM |
Radiation Hardened TTL Input, 3-to-8 Line Decoder/Demultiplexer ACT SERIES, OTHER DECODER/DRIVER, INVERTED OUTPUT, UUC16
Radiation Hardened
TTL Input, 3-to-8 Line Decoder/Demultiplexer(抗辐射TTL输入-8线译码器/多路信号分离
CAP 4-ARRAY 68000PF 16V X7R 1206
Radiation Hardened TTL Input/ 3-to-8 Line Decoder/Demultiplexer
|
Intersil, Corp.
Intersil Corporation
|
| FSYA150R4 FSYA150D FSYA150D1 FSYA150D3 FSYA150R FS |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 39 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IRHM57264SE |
250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-254AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE
|
IRF[International Rectifier]
|
| IRHM7130 IRHM3130 IRHM8130 IRHM4130 |
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE
|
IRF[International Rectifier]
|
| IRH7250SE IRH7250SE-15 |
Simple Drive Requirements
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-204AA/AE)
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-204AE package
|
IRF[International Rectifier]
|
| 2N7632UC IRHLUC7630Z4 IRHLUC7670Z4 IRHLUC7670Z4-15 |
RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT
Simple Drive Requirements
|
International Rectifier
|
