| PART |
Description |
Maker |
| NE5531079A-T1 NE5531079A-T1-A NE5531079A-T1A-A |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
SILICON POWER MOS FET
|
California Eastern Labs
|
| 2SK2596BXTL-E 2SK259607 |
Silicon N-Channel MOS FET UHF Power Amplifier
|
Renesas Electronics Corporation
|
| 2SK3175A |
Silicon N Channel MOS FET UHF Power Amplifier
From old datasheet system
|
HITACHI[Hitachi Semiconductor]
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| 2SK2414 2SK2414-Z 2SK2414-Z-T1 2SK2414-Z-E1 2SK241 |
Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业
Low withstand voltage Nch MOS FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| 2SK2095N A5800286 |
Transistors > MOS FET > Power MOS FET
Small switching (60V, 10A)
From old datasheet system
|
ROHM[Rohm]
|
| BB302M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| BB503M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor
|
| BB501CAS-TL-E |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB502C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor
|
| BB101M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| BB502CBS-TL-E BB502C |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
