| PART |
Description |
Maker |
| IRF5850 IRF5850TR |
2200 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
-20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package
Ultra Low On-Resistance
|
International Rectifier
|
| STW200NF03 -STW200NF03 |
N-CHANNEL 30V - 0.002 ohm - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET II MOSFET
N-CHANNEL 30V - 0.002 ohm - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET??II MOSFET
N-CHANNEL 30V - 0.002 ohm - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFETII MOSFET N沟道30V 0.002欧姆- 120A条至247超低导通电阻MOSFET的第二STripFET
N-CHANNEL Power MOSFET
N-CHANNEL 30V - 0.002 ohm - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET⑩ II MOSFET
N-CHANNEL 30V - 0.002 ohm - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET?/a> II MOSFET
N-CHANNEL 30V - 0.002 OHM - 120A TO-247 ULTRA LOW ON-RESISTANCE STRIPFET II MOSFET
|
STMicroelectronics N.V.
ST Microelectronics
|
| IRF5800 IRF5800TR IRF580003 |
Ultra Low On-Resistance, P-Channel MOSFET
-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
|
International Rectifier
|
| IRF7750GPBF |
HEXFET庐 Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET
|
International Rectifier
|
| STL75NH3LL |
N-channel 30 V, 0.004 Ω, 20 A, PowerFLAT (6x5) ultra low gate charge STripFET Power MOSFET
N-channel 30 V, 0.004 ヘ, 20 A, PowerFLAT⑩ (6x5) ultra low gate charge STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| 2SK4177 2SK4177-DL-E K4177-TL |
2 A, 1500 V, 13 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| 2SJ594 2SJ594TP-FA |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-252VAR
P-Channel Silicon MOSFET DC / DC Converter Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SJ596 2SJ596TP-FA |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 8A I(D) | TO-252VAR
P-Channel Silicon MOSFET DC / DC Converter Applications
|
SANYO[Sanyo Semicon Device]
|
| STD22NM20N05 STD22NM20N STD22NM20NT4 |
N-CHANNEL 200V - 0.088Ω - 22A DPAK ULTRA LOW GATE CHARGE MDmesh II MOSFET
N-CHANNEL 200V - 0.088ヘ - 22A DPAK ULTRA LOW GATE CHARGE MDmesh⑩ II MOSFET
N-CHANNEL 200V - 0.088Ω - 22A DPAK ULTRA LOW GATE CHARGE MDmesh?/a> II MOSFET
|
STMicroelectronics
|
| TPC8406-H |
Field Effect Transistor Silicon P/N-Channel MOS Type (P-Channel／N-Channel Ultra-High-Speed U-MOSIII)
Field Effect Transistor Silicon P/N-Channel MOS Type (P-Channel拢炉N-Channel Ultra-High-Speed U-MOSIII)
|
Toshiba Semiconductor
|
| UP04979 |
Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2)
|
PANASONIC[Panasonic Semiconductor]
|
| IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
Vishay Intertechnology, Inc.
|
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