| PART |
Description |
Maker |
| 2SD2655 2SD655 |
Silicon NPN Transistor
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
|
Hitachi Semiconductor
TOSHIBA[Toshiba Semiconductor]
Rohm
|
| MT3S04AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TRANSISTOR SILICON NPN EPITAXIAL TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5154 E001054 |
NPN EPITAXIAL TYPE (POWER/ DRIVER STAGE AMPLIFIER APPLICATIONS
NPN EPITAXIAL TYPE (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC3279 E000814 SC3279 2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications
STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MT6C03AE |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC2133 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
| 2SC3001 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
| 2SC2166 |
NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)
|
Mitsubishi Electric Corporation
|
| 2SC4838 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
| 2SC2539 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
