| PART |
Description |
Maker |
| PMV56XN |
UTrenchMOS extremely low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PMF370XN |
N-channel mTrenchMOS extremely low level FET
N-channel uTrenchmos (tm) extremely low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PMWD22XN |
Dual N-channel uTrenchMOS extremely low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PMF280UN |
N-channel UTrenchMOS ultra low level FET
N-channel uTrenchmos (tm) ultra low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| IPW65R041CFD |
extremely low losses due to very low fom rdson qg and eoss
|
Infineon Technologies AG
|
| HCU65R600T |
Extremely low switching loss
|
SemiHow Co.,Ltd.
|
| STD11N65M2 |
Extremely low gate charge
|
STMicroelectronics
|
| PMWD26UN |
Dual N-channel uTrenchMOS ultra low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| MBD110DWT1 |
Extremely Low Minority Carrier Lifetime
|
TY Semiconductor Co., Ltd
|
| DTP9531 DTP953113 |
P-Channel 30 V (D-S) MOSFET Extremely low RDS(on)
|
DinTek Semiconductor Co,.Ltd
|
| DP030U |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
