| PART |
Description |
Maker |
| MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| MRF5P21240R6 MRF5P21240 |
RF POWER FIELD EFFECT TRANSISTOR 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
|
| MRF5P21180 MRF5P21180R6 |
MRF5P21180 2170 MHz, 38 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
|
Motorola Mobility Holdings, Inc.
|
| PTFB211803EL PTFB211803FL |
Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
| MRF5S21130SR3 MRF5S21130 MRF5S21130R3 MRF5S21130S |
MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 MHz, 28 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| CY27022SXCT |
PREMIS(TM):SSCG EMI Reduction; VDD: 3.3 V; Input Frequency: 16.9344 MHz; Output Frequency: 12 MHz to 180.6336 MHz; # Out: 3 180.6336 MHz, OTHER CLOCK GENERATOR, PDSO8
|
Cypress Semiconductor, Corp.
|
| SKY77455 |
Front-End Module for LTE / EUTRAN Band I (Tx 1920-1980 MHz), (Rx 2110-2170 MHz)
|
Skyworks Solutions Inc.
|
| AD9851BRSZ AD9851BRSZRL AD9851BRSRL |
180 MHz Complete DDS synthesizer SPECIALTY ANALOG CIRCUIT, PDSO28
CMOS 180 MHz DDS/DAC Synthesizer
|
Analog Devices, Inc.
ANALOG DEVICES INC
|
| VLB2080 |
VCO, 2080 MHz - 2170 MHz
|
TEMEX COMPONENTS
|
| PD21120R6 |
120 Watts, 2110-2170 MHz PD21120R6 PUSH/PULL LATERAL MOSFET
120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET
|
TRIQUINT SEMICONDUCTOR INC
|
| PTF211301 PTF211301A |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 130 W, 2110-2170 MHZ
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
|
Infineon Technologies AG
|
