| PART |
Description |
Maker |
| NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A NESG |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| BFQ68 BFQ68/B |
TRANSISTOR UHF BIPOLAR BREITBAND 晶体管超高频双极BREITBAND
NPN 4 GHz wideband transistor
|
SIEMENS AG
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| AN26102A AN26102A-14 |
SiGe Linear Power Amplifier for 2.4 GHz Band Applications
SiGe Bi-CMOS Monolithic IC, WLCSP PKG Power Amplifi er
|
Panasonic Battery Group
|
| PH1819-15N |
Wireless Bipolar Power Transistor 15W, 1.78-1.90 GHz
|
M/A-COM Technology Solutions, Inc.
|
| AT-41410 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
| AT-41435 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
| AT-42086-BLKG AT-42086-TR1G AT-42086-TR2G AT-42086 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor
|
AVAGO TECHNOLOGIES LIMITED
|
| AT-42035 AT-42035G |
Up to 6 GHz Medium Power Silicon Bipolar Transistor
|
AVAGO TECHNOLOGIES LIMITED
|
| AT-42070 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor
|
AVAGO TECHNOLOGIES LIMITED
|
| AT-42070 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor
|
HP[Agilent(Hewlett-Packard)]
|
| PHT41410B |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Teledyne Technologies I...
|
| PH1819-10 |
Wireless Bipolar Power Transistor 10W, 1.78-1.90 GHz
|
M/A-COM Technology Solutions, Inc.
|
