| PART |
Description |
Maker |
| KM23C64000T |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K3N7C4000B-DC |
64M-Bit (4Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| AS4LC8M8S0-10FTC AS4LC8M8S0-10TC AS4LC8M8S0-8TC AS |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Alliance Semiconductor, Corp.
|
| K5P6480YCM-T085 |
64M Bit (8Mx8) Nand Flash Memory / Data Sheet
|
Samsung Electronic
|
| CMS6416LAF CMS6416LAH CMS6416LAG |
64M(4Mx16) Low Power SDRAM
|
http://
|
| HY5DV641622AT-5 |
64M(4Mx16) DDR SDRAM 4M X 16 DDR DRAM, 0.5 ns, PDSO66
|
Hynix Semiconductor, Inc.
|
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
| MX25L6408EMI12G MX25L6408EZNI12G MX25L6408EM2I12G |
64M-BIT [x 1 / x 2] CMOS SERIAL FLASH
|
Macronix International
|
| MX25L6402 MX25L6402MC-40 MX25L6402MC-40G |
64M-BIT [x 1] CMOS SERIAL eLite FlashTM MEMORY
|
MCNIX[Macronix International]
|
| MX29LV640BUXBI-90G MX29LV640BU MX29LV640BUTC-12 MX |
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
