| PART |
Description |
Maker |
| 89LV1632RPQK-30 |
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位）低压亿立方米的SRAM
|
Maxwell Technologies, Inc
|
| AM29BDD160GT54DKI AM29BDD160GB64CKI AM29BDD160GB65 |
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 64 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 67 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位 M中的x 16-bit/512亩32位）.5伏的CMOS只突发模式，双启动，同步写闪
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PBGA80
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM29F040 AM29F040-120EI AM29F040-120FC AM29F040-12 |
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PDIP32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 150 ns, PDSO32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PQCC32
512K X 8 FLASH 5V PROM, 90 ns, PQCC32
|
Advanced Micro Devices, Inc.
SPANSION LLC
|
| EN29F040A- EN29F040A EN29F040A-55TC EN29F040A-70JC |
4 Megabit (512K x 8-bit) Flash Memory
|
ETC[ETC]
Eon Silicon Solution Inc.
|
| 33C408RTFS-30 33C408 33C408RPFB-20 33C408RPFB-25 3 |
4 Megabit (512K x 8-Bit) CMOS SRAM
|
MAXWELL[Maxwell Technologies]
|
| PDM31096 |
4 Megabit 3.3V Static RAM 512K x 8-Bit
|
ETC
|
| 79C0408RT4FH12 79C0408RT4FH15 79C0408RT4FH20 79C04 |
4 megabit (512k x 8-bit) EEPROM MCM
|
Maxwell Technologies
|
| 89LV1632RPQK-30 89LV1632 89LV1632RPQE-30 89LV1632R |
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM
|
MAXWELL[Maxwell Technologies]
|
| PDM31096SA8TTY PDM31096SA8TTR PDM31096SA8SOTR PDM3 |
4 megabit 3.3V static RAM 512K x 8-bit revolutionary pinout
|
PARADIGM
|
| EN29LV800JT-70T EN29LV800JT-90TI |
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 70ns. Top sector.
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 90ns. Top sector.
|
Eon Silicon Solution
|
