| PART |
Description |
Maker |
| U06C30 U06C40 U06C50 U06C60 |
POWER RECTIFIERS(6.0A/300-600V)
POWER RECTIFIERS(6.0A,300-600V)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| F30D60 F30D30 F30D40 F30D50 |
POWER RECTIFIERS(30A/300-600V)
POWER RECTIFIERS(30A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
| F16C60 F16C40 F16C30 F16C50 |
POWER RECTIFIERS(16A/300-600V)
POWER RECTIFIERS(16A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
| U10A60 U10A30 U10A40 U10A50 |
FAST RECTIFIERS(10A/300-600V)
FAST RECTIFIERS(10A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
| MJE585006 MJE5850G MJE5852G MJE5850 MJE5851 MJE585 |
8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS 8 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
ONSEMI[ON Semiconductor]
|
| IRFIBC20G IRFIBC20 IRFIBC20GPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=1.7A)
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A)
|
IRF[International Rectifier]
|
| MMFT960T106 MMFT960T1 MMFT960T1G |
Power MOSFET 300 mA, 60 Volts; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
Power MOSFET 300 mA, 60 Volts N−Channel SOT−223
|
ON Semiconductor
|
| ARF466FL ARF466FL10 |
RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 200; BVDSS (V): 1000; RqJC (ºC/Watt): 0.27; Case Style: T2; COO: A-E VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
Microsemi, Corp.
Microsemi Corporation
|
| R6200230 R6202250 R6201050 R6201850 R6201040 R6200 |
500 A, 400 V, SILICON, RECTIFIER DIODE
General Purpose Rectifier (300-500 Amperes Average 2400 Volts) 通用整流器（300-500安培平均2400伏特
300 A, 2200 V, SILICON, RECTIFIER DIODE HERMETIC SEALED PACKAGE-2
300 A, 1200 V, SILICON, RECTIFIER DIODE
300 A, 200 V, SILICON, RECTIFIER DIODE
|
Powerex Power Semicondu...
POWEREX INC
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Powerex Power Semiconductor...
|
| IRFU1N60A IRFR1N60A IRFR1N60ATR IRFR1N60ATRL IRFR1 |
600V Single N-Channel HEXFET Power MOSFET in a D-Pak package
600V Single N-Channel HEXFET Power MOSFET in a I-Pak package
SMPS MOSFET
Power MOSFET(Vdss=600V, Rds(on)max=7.0ohm, Id=1.4A)
|
IRF[International Rectifier]
|
| MAX6740XKD-T MAX6741XKD-T MAX6742XKD-T MAX6743XKD- |
Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits
Low-Power Dual-/Triple-Voltage SC70 ?P Supervisory Circuits
(MAX6736 - MAX6745) Low-Power Dual-/Triple-Voltage SC70 UP Supervisory Circuits
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 4.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
http://
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
600V N-Channel B-FET / Substitute of SSI4N60A
600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
|
