| PART |
Description |
Maker |
| TISP1120F3D |
DUAL FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTOR
|
Bourns Electronic Solutions
|
| TISP61521 |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Bourns Inc.
|
| TISP61089 |
DUAL FORWARD-CONDUCTING-P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Power Innovations Ltd
Power Innovations Limited
Power Innovations International, Inc.
|
| TISP61511DR TISP61511D TISP61511D-S TISP61511DR-S |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Bourns Electronic Solutions
|
| TISPPBL2P TISPPBL2D TISPPBL1P TISPPBL1D |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS 双远期导电的P -门晶闸管爱立信成分SLIC组件
|
Mospec Semiconductor, Corp.
Power Innovations International, Inc.
Power Innovations Limited
POINN[Power Innovations Ltd]
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| XSDT306TR XSDT306TS XSDT306TP XSDT306TK |
THYRISTOR|REVERSE-CONDUCTING|1.8KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.9KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.7KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.5KV V(DRM)|DO-200VAR142
|
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| Q60103-Y32-E Q60103-Y32-F Q60103-Y23-F Q60103-Y23- |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes PNP晶体管为自动输入
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
PNP TRANSISTORS FOR AF INPUT STAGES
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| IHW40N60R |
Reverse conducting IGBT
|
Infineon Technologies A...
|
