| PART |
Description |
Maker |
| DB300S DB300R DB300A SIDAC DB120A DB120R DB120S DB |
Bilateral Voltage triggered Switch
Bilateral Voltage triggered Swit h Breakover Voltage:95-330Volts
Bilateral Voltage triggered Swit h Breakover Voltage:95-330Volts c
|
Jinan Jingheng (Group) ...
Jinan Jing Heng Electro...
|
| SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V（D-S），Qg，快速开
N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| STW29NK50ZD W29NK50ZD |
N-CHANNEL 500V - 0.11 OHM - 29A TO-247 FAST DIODE SUPERMESH MOSFET
N-CHANNEL 500 V - 0.11蟹 - 29A TO-247 Fast Diode SuperMESH??MOSFET
N-CHANNEL 500 V - 0.11з - 29A TO-247 Fast Diode SuperMESH⑩ MOSFET
N-CHANNEL 500 V - 0.11?/a> - 29A TO-247 Fast Diode SuperMESH?/a> MOSFET
N-CHANNEL 500 V - 0.11 - 29A TO-247 Fast Diode SuperMESH MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| SI4850EY SI4850EY-E3 SI4850EY-T1 SI4850EY-T1-E3 |
N-Channel Reduced Qg, Fast-Switching MOSFET N沟道Qg，快速开关MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET N沟道减少Qg和，快速开关MOSFET
N-Channel Reduced Qg/ Fast Switching MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| IXTH500N04T2 IXTT500N04T2 |
500 A, 40 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS CORP
IXYS Corporation
|
| STP5NA60 STP5NA60FI 3065 |
N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET)
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| STB20NM50FD |
N-CHANNEL 500V 0.20 OHM 20A D2PAK FDMESH POWER MOSFET
N-CHANNEL 500V - 0.20ohm - 20A D2PAK FDmesh⑩Power MOSFET With FAST DIODE
N-CHANNEL 500V - 0.20ohm - 20A D2PAK FDmeshPower MOSFET With FAST DIODE
N-CHANNEL 500V - 0.20ohm - 20A D2PAK FDmesh?Power MOSFET With FAST DIODE
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STB3NA80 STB3NA80-1 |
3.1 A, 800 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
|
STMICROELECTRONICS
ST Microelectronics
|
| STI30NM60ND STP30NM60ND STW30NM60ND STF30NM60ND ST |
N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh?/a> II Power MOSFET (with fast diode)
N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET (with fast diode)
N-channel 600V - 0.11楼? - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh垄芒 II Power MOSFET (with fast diode)
N-channel 600V - 0.11ヘ - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh⑩ II Power MOSFET (with fast diode)
|
STMicroelectronics
|
| SI9804DY |
20-V (D-S) Single
N-Channel Reduced Qg, Fast Switching MOSFET
N-Channel Reduced Qg/ Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| ISL54060IRUZ-T ISL54060IRTZ-T ISL54061 ISL54061IRT |
Negative Signal Swing, Sub-ohm, Dual SPST Single Supply Swit
1.8V to 6.5V, Sub-ohm, Dual SPST Analog Switch with Negative Signal Capability; Temperature Range: -40°C to 85°C; Package: 10-TDFN DUAL 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO10
Negative Signal Swing, Sub-ohm, Dual SPST Single Supply Switch
1.8V to 6.5V, Sub-ohm, Dual SPST Analog Switch with Negative Signal Capability; Temperature Range: -40°C to 85°C; Package: 10-uTQFN T&R DUAL 1-CHANNEL, SGL POLE SGL THROW SWITCH, PQCC10
|
Intersil Corporation
Intersil, Corp.
|
