| PART |
Description |
Maker |
| 2SK1215 2SK1215D |
Silicon N-Channel MOS FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Silicon N Channel MOS FETs
|
HITACHI[Hitachi Semiconductor]
|
| TC74AC151F07 TC74AC151F TC74AC151FN TC74AC151P |
CMOS Digital Integrated Circuit Silicon Monolithic 8-Channel Multiplexer
|
Toshiba Semiconductor
|
| IP4286CZ6-TBF IP4286CZ6-TTY |
Integrated 4-channel ESD protection UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, MO-252
|
NXP Semiconductors N.V.
|
| ADUM6200 ADUM6201 |
Dual-Channel, 5 <span style="text-transform: lowercase">k</span>V Isolators with Integrated DC/DC Converter (2/0 channel directionality)
Dual-Channel, 5 kV Isolators with Integrated DC/DC Converter (1/1 channel directionality)
|
Analog Devices
|
| TC7MZ4053FK TC7MZ4051FK TC7MZ4052FK |
Triple 2-Channel Analog Multiplexer/Demultiplexer
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
| IP4286CZ6-TBF IP4286CZ6-TTD IP4286CZ6-TTY IP4286CZ |
Integrated 4-channel ESD protection
UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE ROHS COMPLIANT, PLASTIC, SC-74, TSOP-6
|
NXP Semiconductors N.V.
|
| MASW-002102-13580 MASW-002102-13580G MASW-003102-1 |
2000 MHz - 18000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.8 dB INSERTION LOSS
HMIC Silicon PIN Diode Switches with Integrated Bias Network
HMIC?/a> Silicon PIN Diode Switches with Integrated Bias Network
HMIC垄芒 Silicon PIN Diode Switches with Integrated Bias Network
|
M/A-COM Technology Solutions, Inc.
|
| MIG20J906H MIG20J906HA |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
| MIG50J906E |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
| 2SK2406 2SK2406TP-FA |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
N-Channel Silicon MOSFET Ultrahigh-Speed Switching, Motor Driver Applications
|
Sanyo
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
