| PART |
Description |
Maker |
| ZXT10N50DE6 ZXT10N50DE6TA ZXT10N50DE6TC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V NPN Low Sat Transistor 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR 50V NPN硅低饱和开关晶体管
|
ZETEX[Zetex Semiconductors] Diodes Incorporated Zetex Semiconductor PLC
|
| 2DA1213O-15 2DA1213O-13 2DA1213Y-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V 50V PNP POWER SWITCHING TRANSISTOR IN SOT89
|
Diodes Incorporated
|
| BC857BLP-7 BC857BLP-7B BC857BLP11 DIODESINC-BC857B |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V 50V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
|
Diodes Incorporated
|
| 2SC945 2SA812 NTC2517 2SC2001 NTC2751 NTC2654 2SC1 |
TRANSISTOR,BJT,NPN,50V V(BR)CEO,100MA I(C),TO-92 TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-23VAR Transistor - Datasheet Reference TRANSISTOR,BJT,NPN,25V V(BR)CEO,700MA I(C),TO-92 TRANSISTOR,BJT,NPN,50V V(BR)CEO,100MA I(C),TO-236VAR From old datasheet system
|
NEC Electron Devices
|
| B37873K5473M60 B37873K5474M62 B37932K5223M60 B3793 |
CAPACITOR 47 NF 50V CAPACITOR 470 NF 50V CAPACITOR 22 NF 50V KONDENSATOR 100NF 50V CAPACITOR 220 NF 50V CAPACITOR 1 UF 50V 电容超滤50V CAPACITOR 1 PF 50V 电容公积0V
|
Motorola Mobility Holdings, Inc. EPCOS AG
|
| 2SB1566 A5800383 |
Power Transistor (-50V, -3A) 功率晶体管(- 50V的三号甲 Power Transistor (-50V/ -3A) From old datasheet system
|
Rohm Co., Ltd.
|
| ZXT12N50DX ZXT12N50DXTA ZXT12N50DXTC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR Dual NPN Low Sat Transistor
|
Diodes Incorporated ZETEX[Zetex Semiconductors]
|
| 151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82 晶体管|晶体管|叩| 100V的五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管|叩| 180V五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管| npn型| 140伏特五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管|叩| 50V五(巴西)总裁| 6A条一c)|2 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五(巴西)总裁|甲一c)| STR-5/16 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五(巴西)总裁|甲一(c)| STR-5/16 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五(巴西)总裁|甲一(c)| STR-5/16
|
Samsung Semiconductor Co., Ltd. Molex, Inc. Intel, Corp.
|
| CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y 25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O 25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体 25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
|
Continental Device India, Ltd. CDIL[Continental Device India Limited] Continental Device Indi...
|
| DTA123YCAHZG DTA123YCAHZGT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
| DTC113ZCAHZGT116 |
NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
| DTA113ZCAHZG |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|