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CY7C1353 - 256Kx18 Flow-Through SRAM with NoBL Architecture(B>NoBL结构56Kx18流通式 静态RAM) From old datasheet system

CY7C1353_341577.PDF Datasheet

 
Part No. CY7C1353 7C1353
Description 256Kx18 Flow-Through SRAM with NoBL Architecture(B>NoBL结构56Kx18流通式 静态RAM)
From old datasheet system

File Size 180.62K  /  12 Page  

Maker

Cypress Semiconductor Corp.



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Part: CY7C1353-66AC
Maker: CYPRESS
Pack: QFP
Stock: 391
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    50: $11.58
  100: $11.00
1000: $10.42

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 Full text search : 256Kx18 Flow-Through SRAM with NoBL Architecture(B>NoBL结构56Kx18流通式 静态RAM) From old datasheet system
 Product Description search : 256Kx18 Flow-Through SRAM with NoBL Architecture(B>NoBL结构56Kx18流通式 静态RAM) From old datasheet system


 Related Part Number
PART Description Maker
CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位(为512k × 36/1M × 18)流体系结构,通过与NoBLTM的SRAM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
GS881Z18BD-133 GS881Z18BD-133I GS881Z18BD-150 GS88 133MHz 8.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
150MHz 7.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
166MHz 7ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
200MHz 6.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
225MHz 6ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
250MHz 5.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
GSI Technology
IDT71V433 IDT71V433S11PF IDT71V433S11PFI IDT71V433 From old datasheet system
32K x 32 3.3V Synchronous SRAM Flow-Through Outputs
32K X 32 Flow-Through Ouputs SRAM
Integrated Device Technology
IDT
MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128 3.3V I/O28K x 32,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器)
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18,流量通过ZBT SRAM的电压(3.3V输入/输出Mb的流通式同步静态存储器
3.3V I/O28K x 36,Flow-Through ZBT SRAM(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36,流量通过ZBT SRAM的电压(3.3V或输输出Mb的流通式同步静态存储器
2.5V I/O28K x 32,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 2.5VI / O28K的32,流量通过ZBT SRAM的电压(2.5V输入/输出Mb的流通式同步静态存储器
Micron Technology, Inc.
IDT71V633S11PF IDT71V633S11PFI IDT71V633S12PFI IDT From old datasheet system
64K x 32 3.3V Synchronous SRAM Flow-Through Outputs Burst Counter, Single Cycle Deselect
3.3V 64K x 32 Static SRAM with Flow-Through Outputs
IDT[Integrated Device Technology]
K7A403609B06 128Kx36/x32 & 256Kx18 Synchronous SRAM
Samsung semiconductor
CY7C1363B-133AJC CY7C1363B-133AJI CY7C1363B-133AI 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 7.5 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 512K X 18 CACHE SRAM, 6.5 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA119
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 512K X 18 CACHE SRAM, 7.5 ns, PBGA119
CONNECTOR ACCESSORY
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
IC61SF25636T IC61SF25636D IC61SF25632T IC61SF25632 SYNCHRONOUS STATIC RAM, Flow Through
From old datasheet system
8Mb SyncBurst Flow through SRAM
ICSI[Integrated Circuit Solution Inc]
MT55L512Y32F MT55V512Y36F MT55L1MY18F MT55V512V36F 16Mb: 512K x 32,Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 36,Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 36锛?low-Through ZBT SRAM(16Mb娴??寮??姝ラ?????ㄥ?)
Micron Technology, Inc.
GS8162Z72C-150I GS8162Z18B-250I GS8162Z18B-200I GS 18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 7.5 ns, PBGA209
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 5.5 ns, PBGA119
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 6.5 ns, PBGA119
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 6 ns, PBGA119
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 7 ns, PBGA165
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 5.5 ns, PBGA165
18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 6.5 ns, PBGA209
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 8.5 ns, PBGA165
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 7.5 ns, PBGA119
GSI Technology, Inc.
 
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