| PART |
Description |
Maker |
| AM82731-025 2768 |
From old datasheet system RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
| HVV1214-100 HVV1214-100-EK |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200渭s Pulse, 10% Duty For Ground Based Radar Applications L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| AM82731-012 |
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
|
STMicroelectronics
|
| MS2604 |
RF& MICROWAVE TRANSISTORS S BAND RADAR APPLICATIONS
|
Advanced Power Technology Ltd.
|
| AM2931-110 |
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
|
SGS Thomson Microelectronics STMicroelectronics
|
| AM81214-006 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
ST Microelectronics
|
| BLS6G2731S-130 |
LDMOS S-band radar power transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
| 1214-550P |
550 Watts - 300楼矛s, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz 550 Watts - 300μs, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| BLS6G3135-20 BLS6G3135S-20 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors
|
| BLS6G2933S-130 |
LDMOS S-band radar power transistor
|
NXP Semiconductors
|
| BLS7G2933S-150 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors N.V.
|