| PART |
Description |
Maker |
| MMFT2N02EL MMFT2N02EL_D ON2221 |
From old datasheet system
N-hannel Enhancement-ode Logic Level SOT23
MEDIUM POWER LOGIC LEVEL TMOS FET 1.6 AMP 20 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MMFT3055EL |
MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| PH3230S PH3230S115 |
N-channel Trenchmos (tm) logic level FET; Package: SOT669 (LFPAK); Container: Tape reel smd 107 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235AA
N-channel TrenchMOS logic level FET
N-channel TrenchMOS⑩ logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BUK9614-55A BUK9514-55A |
Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 160V; Case Size: 35x25 mm; Packaging: Bulk
TrenchMOS logic level FET
TrenchMOS TM logic level FET
TrenchMOS(tm) logic level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| SI4884 SI4884-02 |
TrenchMOS(tm) logic level FET
From old datasheet system
TrenchMOS? logic level FET
TrenchMOS⑩ logic level FET
TrenchMOS logic level FET
TrenchMOSlogic level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| MTD20N06HDL ON2483 |
TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
|
| MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D |
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTD12N06EZL_D ON2462 MTD12N06EZL-D |
TMOS E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS
|
ON Semiconductor
|
| BUK9628-100A BUK9528-100A NXPSEMICONDUCTORS-BUK962 |
TrenchMOS transistor Logic level FET 49 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TrenchMOS(tm) transistor Logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate
From old datasheet system
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
|
ON Semiconductor
Motorola, Inc
|
