| PART |
Description |
Maker |
| IC41SV4105 IC41SV4105-50J IC41SV4105-50JG IC41SV41 |
DYNAMIC RAM, FPM DRAM
From old datasheet system
1Mx4 bit Dynamic RAM with Fast Page Mode
|
ICSI[Integrated Circuit Solution Inc]
|
| HYB514100BJ-50- Q67100-Q759 Q67100-Q971 |
4M × 1-Bit Dynamic RAM(4M × 1位动态RAM)
4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20
|
SIEMENS AG
|
| HYB5116400BJ-50- Q67100-Q1049 Q67100-Q1051 HYB5116 |
4M x 4-Bit Dynamic RAM 4M X 4 FAST PAGE DRAM, 70 ns, PDSO24
4M x 4-Bit Dynamic RAM 4米4位动态随机存储器
|
http://
SIEMENS AG
|
| K6R4004C1C-C K6R4004C1C-I20 K6R4004C1C-C10 K6R4004 |
1Mx4 Bit High Speed Static RAM(5V Operating). 1Mx4位高速静态RAMV的工作）
1Mx4 Bit High Speed Static RAM(5V Operating). 1Mx4位高速静RAMV的工作）
1Mx4 Bit High Speed Static RAM(5V Operating). 1Mx4位高速静态RAM5V的工作）
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MSM5432128 MSM5432126 MSM5432126_8 |
131072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
From old datasheet system
|
OKI[OKI electronic componets]
|
| MSM5116165DSL MSM5116165D MSM5116165D-70JS MSM5116 |
1048576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
OKI electronic components
OKI[OKI electronic componets]
|
| MSM5117405B |
4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
4194304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
OKI electronic components
OKI[OKI electronic componets]
|
| MSM51V16405A |
4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
4194304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
OKI electronic components
OKI[OKI electronic componets]
|
| HYM72V1620GS-50 HYM72V1620GS-50- HYM72V1620GS-60 H |
16M x 72-Bit Dynamic RAM Module 16M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
From old datasheet system
16M x 72-Bit Dynamic RAM Module (ECC - Module )
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| K4F160411D K4F160412D K4F170411D K4F170412D K4F160 |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
