| PART |
Description |
Maker |
| HA12062AMP |
Data Strobe IC Developed For R-DAT
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| DSK4D263238D K4D263238D K4D263238D-QC40 K4D263238D |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M53S128324A-2E |
Bi-directional data strobe (DQS)
|
Elite Semiconductor Mem...
|
| MT41J128M16HA-125 MT41J256M8JE-125 |
Differential bidirectional data strobe
|
Micron Technology
|
| HD74LS151 74LS151 |
1-of-8 Data Selectors/Multiplexers(with strobe)
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| HD74HC157 HD74HC158 |
Quad. 2-to-1-line Data Selectors/Multiplexers
These devices each consist of four 2-input digital multiplexers with common select and strobe inputs
|
Hitachi Semiconductor
|
| K4D263238A K4D263238A-GC33 K4D263238A-GC36 K4D2632 |
DIODE ZENER SINGLE 500mW 3.9Vz 0.05mA-Izt 0.05 5uA-Ir 2 SOD-123 3K/REEL
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER SINGLE 500mW 3.3Vz 0.05mA-Izt 0.05 7.5uA-Ir 1.5 SOD-123 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| STP28NM50N STB28NM50N |
N-channel Power MOSFETs developed using the second generation of MDmesh
|
STMicroelectronics
|
| 2316187 |
Developed specifically for field device coupler systems
|
PHOENIX CONTACT
|
| MCP1650 MCP1650REMS MCP1650REUN MCP1650SEMS MCP165 |
MCP1651 is a 750 kHz gated oscillator boost controller packaged in an 8 or 10-pin MSOP package. Developed for high-power, portable ...
MCP1650/51/52/53 is a 750 kHz gated oscillator boost controller packaged in an 8 or 10-pin MSOP package. Developed for high-power, ...
|
Microchip Technology
|
