| PART |
Description |
Maker |
| BUV11 |
20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS
SITCHMODE Series NPN Silicon Power Transistor
|
Motorola Inc
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| MJ16020 MJ16022 ON1987 |
From old datasheet system
NPN SILICON POWER TRANSISTOR 30 AMPERES 450 VOLTS
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| BU406 |
7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS
|
Motorola, Inc
ON Semiconductor
|
| MJD45H11-1 MJD45H11T4 MJD44H11 MJD44H11-1 MJD44H11 |
SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS 8 A, 80 V, NPN, Si, POWER TRANSISTOR
DPAK For Surface Mount Applications
From old datasheet system
|
MOTOROLA[Motorola Inc]
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| BUT34 |
50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS 250 WATTS
|
Motorola Inc
Motorola, Inc.
|
| BU406 BU407 ON0235 |
From old datasheet system
7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| 2N640004 2N6401G 2N6426G 2N6405G 2N6400 2N6401 2N6 |
Silicon Controlled Rectifier 16A 400V
Darlington Transistors NPN Silicon
Silicon Controlled Rectifiers SCRs 16 AMPERES RMS 50 thru 800 VOLTS
|
ONSEMI[ON Semiconductor]
|
| MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM
TMOS POWER FET 12 AMPERES 60 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MJW16206 |
POWER TRANSISTORS 12 AMPERES 1200 VOLTS - VCES 50 and 150 WATTS 12 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-247AE
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| 2SD2655 2SD655 |
Silicon NPN Transistor
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
|
Hitachi Semiconductor
TOSHIBA[Toshiba Semiconductor]
Rohm
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
