| PART |
Description |
Maker |
| KSK117 |
Tools, Drill Bits
N-CHANNEL JUNCTION FET (LOW FREQUENCY LOW NOISE AMP.)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| 2SK369-07 |
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK18407 2SK184 |
Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK88007 2SK880 |
Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK2074 |
N-Channel Junction Silicon FET High-Frequency Low-Noise Amplifier Applications
|
Sanyo
|
| 2SK2145 E001440 |
From old datasheet system
N CHANNEL JUNCTION TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK170 |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
TOSHIBA
|
| 2SK2145 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications
|
TOSHIBA
|
| NJ30 |
Silicon Junction Field-Effect Transistor Low-Noise High Gain Amplifier
|
INTERFET
|
| ATF-58143-BLK ATF-58143-TR2G ATF-58143 ATF-58143-B |
C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-58143 · Single Voltage E-pHEMT Low Noise 30.5 dBm OIP3 in SC-70
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
|
AGILENT TECHNOLOGIES INC
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
