| PART |
Description |
Maker |
| IC-NQI |
13-bit Sin/D CONVERTER WITH CALIBRATION
|
IC-Haus GmbH
|
| IBM11M32735C |
32M x 72 DRAM Module(32M x 72动态RAM模块) 32M × 72配置内存2M × 72配置动态内存模块）
|
International Business Machines, Corp.
|
| KM23C32101C |
32M-Bit (4Mx8) CMOS MASK ROM(32M(4Mx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IC-LGC |
21-BIT OPTICAL POSITION ENCODER WITH SERIAL/PARALLEL AND SIN/COS OUTPUT
|
IC-Haus GmbH
|
| HYS64V16300GU HYS72V16300GU HYS64V32220GU HYS72V32 |
3.3 V 16M × 64-Bit 1 Bank SDRAM Module(3.3 V 16M × 64-1同步动态RAM模块)
3.3 V 16M × 72-Bit 1 Bank SDRAM Module(3.3 V 16M × 72-1同步动态RAM模块)
3.3 V 32M × 64-Bit 1 Bank SDRAM Module(3.3 V 32M × 64-1同步动态RAM模块)
3.3 V 32M × 72-Bit 1 Bank SDRAM Module(3.3 V 32M × 72-1同步动态RAM模块)
32M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
SIEMENS AG
INFINEON TECHNOLOGIES AG
|
| IC-TW2EVALTW22D IC-TW2QFN24 |
8-BIT SIN/COS INTERPOLATION IC WITH INTEGRATED EEPROM
8-BIT SIN/COS INTERPOLATION IC WITH INTEGRATED EEPROM
|
IC-Haus GmbH
|
| HYS64V16300GU-7-C2 HYS64V16300GU-7.5-C2 HYS64V3222 |
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.36米x 64/72-Bit 1银行128MByte SDRAM的模3.332M的x 64/72-Bit 2银行256MB的内存模68引脚无缓冲DIMM模块
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.36米x 64/72-Bit 1银行128MByte SDRAM的模.32M的x 64/72-Bit 2银行256MB的内存模68引脚无缓冲DIMM模块
32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
|
Infineon Technologies AG
Infineon Technologies A...
|
| IBM13N32644JCA-260T IBM13N32734JCA-260T IBM13N3264 |
x64 SDRAM Module
32M x 64 Two-Bank Unbuffered SDRAM Module(32M x 64 2组不带缓的冲同步动态RAM模块)
x72 SDRAM Module x72内存模块
32M x 72 Two-Bank Unbuffered SDRAM Module(32M x 72 2组不带缓冲的同步动态RAM模块) 32M × 72配置双行缓冲内存模组2M × 72配置2组不带缓冲的同步动态内存模块）
|
IBM Microeletronics
DB Lectro, Inc.
International Business Machines, Corp.
|
| KM23V32005BTY KM23V32005BETY |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| UPD29F032202ALGZ-B85BY-MJH UPD29F032202ALGZ-B85TY- |
32M-bit(4M-wordx8-bit/2M-wordx16-bit) Flash memory
|
NEC
|
