| PART |
Description |
Maker |
| KM68V257C KM68V257C-15 KM68V257C-17 |
32Kx8 Bit High Speed Static RAM(3.3V Operating), Evolutionary Pin out.
|
Samsung semiconductor
|
| K6E0808C1C K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C- |
32K X 8 STANDARD SRAM, 12 ns, PDSO28
32Kx8 Bit High Speed CMOS Static RAM 32Kx8位高速CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM62U256CLTG-10L KM62U256CLTG-8L KM62U256CLG-10L K |
32Kx8 bit Low Power & Low Vcc CMOS Static RAM
32Kx8 bit Low Power AND Low Vcc CMOS Static RAM
|
ETC
SAMSUNG[Samsung semiconductor]
|
| SST39VF016-70-4C-B2K SST39VF080-90-4I-B2K SST39VF0 |
x8 Flash EEPROM
4-Mbit (256K x 16) Static RAM
CYRF6936 - WirelessUSB™ LP 2.4 GHz Radio SoC
IC SRAM 32KX8 3.0V LP 28-SOIC
20-, 40-, and 60-Bit I/O Expander with EEPROM x8闪存EEPROM
|
Silicon Storage Technology, Inc.
|
| CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
MoBL2™ 4-Mb (256K x 16) Static RAM
MoBL® 4-Mbit (256K x 16) Static RAM
5V, 3.3V, ISR™ High-Performance CPLDs
Licorice Board (CY22150 Candy Board) EEPROM
MoBL® 4-Mbit (512K x 8) Static RAM EEPROM
MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM
MoBL® 2-Mbit (128K x 16) Static RAM
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc.
3M Company
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| UPD424440LE-70 UPD424440LE-60 UPD424440LE-80 UPD42 |
MoBL® 8-Mbit (1024K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
CY62167DV30 MoBL® - 16-Mbit (1M x 16) Static RAM
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
Vishay Intertechnology, Inc.
|
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IC62C1024L IC62C1024L-35Q IC62C1024L-35QI IC62C102 |
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
From old datasheet system
55ns; 5V; 128K x 8 low power CMOS static RAM
35ns; 5V; 128K x 8 low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| MF34M1-LZCATXX MF3257-LZCATXX MF3513-LZCATXX MF312 |
512Kb, 8/16-bit data bus static RAM card
128Kb, 8/16-bit data bus static RAM card
STATIC RAM CARDS
8/16-bit Data Bus Static RAM Card 16位产品数据总线静态存储器
256Kb, 8/16-bit data bus static RAM card
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| IDT71T016SA 71T016SA_DS_22694 IDT71T016 |
2.5V 64K x 16 Static RAM
From old datasheet system
2.5V CMOS Static RAM
|
IDT
|
