| PART |
Description |
Maker |
| NX7363JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX8369TS |
LASER DIODE 1 625 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
California Eastern Labs
|
| NX8349YK |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX6352GP27-AZ NX6352GP33-AZ NX6352GP29-AZ |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
|
California Eastern Labs
|
| NX6314EH |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
Renesas Electronics Corporation
|
| NX6411GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX8369TB |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
California Eastern Labs
|
| ML725AA11F ML725B11F ML725J11F ML720L11S ML720AA11 |
1310 nm, LASER DIODE
MITSUBISHI LASER DIODES InGaAsP DFB LASER DIODES 三菱激光二极管InGaAsP的DFB激光器
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| M66510 M66510FP M66510P |
From old datasheet system
LASER-DIODE LASER-DIODE DRIVER
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M66512P M66512FP M66512 |
From old datasheet system
LASER-DIODE LASER-DIODE DRIVER
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
