| PART |
Description |
Maker |
| UPD4482161GF-A65 UPD4482161GF-C75 UPD4482321GF-C75 |
8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION
|
NEC Corp.
|
| PD464318L PD464336L |
4M-Bit Bi-CMOS Synchronous Fast Static RAM(4M BiCMOS 同步快速静态RAM)
|
NEC Corp.
|
| UPD4482183 UPD4482363 UPD4482183GF-A50 UPD4482363G |
8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION DOUBLE CYCLE DESELECT 800万位CMOS同步快速静态存储器流水线操作双循环取消选择
|
NEC Corp.
NEC, Corp.
|
| FM93C56A FM93C56AE FM93C56AV FM93C56ALZ |
2K-Bit Serial CMOS EEPROM (MICROWIRE?Synchronous Bus)
2K-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)
2K-Bit Serial CMOS EEPROM (MICROWIRE Synchronous Bus)
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| GS84032T-166 GS84032T-166I GS84032B-166I GS84032B- |
x32 Fast Synchronous SRAM
x36 Fast Synchronous SRAM
256K x 18 128K x 32 128K x 36 4Mb Sync Burst
x18 Fast Synchronous SRAM x18快速同步SRAM
|
Coilcraft, Inc.
|
| VG4616322BQ-7R VG4616322BQ-5 VG4616322BQ-5R VG4616 |
262,144x32x2-Bit CMOS Synchronous Graphic RAM 512K X 32 SYNCHRONOUS GRAPHICS RAM, 4.5 ns, PQFP100
262/144x32x2-Bit CMOS Synchronous Graphic RAM
|
Vanguard International Semiconductor, Corp.
Vanguard International ...
|
| MCM63P818 MCM63P736 MCM63P736TQ100 MCM63P736ZP133R |
Circular Connector; Body Material:Aluminum; Series:PT07; No. of Contacts:2; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Jam Nut Receptacle; Circular Contact Gender:Pin; Insert Arrangement:8-2
128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 256K X 18 CACHE SRAM, 5 ns, PQFP100
128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 4 ns, PBGA119
128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 5 ns, PQFP100
Replaced by PTH12000W :
|
MOTOROLA INC
NEC, Corp.
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| MB8501S064AC-100 MB8501S064AC-67 MB8501S064AC-84 |
CMOS 1M×64 Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 1M×64同步动态RAM)
|
Fujitsu Limited
|
| IBM0418A86SQKA IBM0418A86LQKA IBM0418A86LQKA-6 IBM |
8 Mb Synchronous Communication SRAM(8M位同步流水线式通讯静态RAM) 8兆同步通信的SRAM00万位同步流水线式通讯静态内存）
x36 Fast Synchronous SRAM x36快速同步SRAM
x18 Fast Synchronous SRAM x18快速同步SRAM
|
IBM Microeletronics
International Business Machines, Corp.
Advanced Interconnections, Corp.
|
| SLA24C04-D SLA24C04-S SLA24C04-D-3 SLA24C04-S-3 Q6 |
4 Kbit 512 x 8 bit Serial CMOS EEPROMs/ I2C Synchronous 2-Wire Bus
4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus 4千位512 × 8位串行CMOS EEPROM的，I2C同步2线总线
4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Siemens Semiconductor Group
SIEMENS AG
SIEMENS A G
|
