| PART |
Description |
Maker |
| HAT2027R |
Silicon N Channel Power MOS FET High Speed Power Switchin
|
HITACHI[Hitachi Semiconductor]
|
| AD8684ARUZ-REEL AD8682-15 AD8682 |
Dual Low Power, High Speed JFET Operational Amplifier
Dual/Quad Low Power, High Speed
Quad Low Power, High Speed JFET Operational Amplifiers; Package: TSSOP; No of Pins: 14; Temperature Range: Industrial QUAD OP-AMP, 4000 uV OFFSET-MAX, 3.5 MHz BAND WIDTH, PDSO14
|
Analog Devices, Inc.
|
| MT5400-UV-HP |
Dimension in mm High power, high-speed, narrow beam angle, high reliablitiy
|
Marktech Corporate
|
| MT5375-UV |
Dimension in mm High power, high-speed, narrow beam angle, high reliablitiy
|
Marktech Corporate
|
| FS30KMH-2 |
Power MOSFETs: FS Series, Low Voltage, 100V for High-Speed Switching Use
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Powerex Power Semiconductors
|
| X20C17PM-35 X20C17PM-45 X20C17PM-55 X20C17 X20C17P |
High Speed AUTOSTORE NOVRAM
High Speed AUTOSTORE⑩ NOVRAM
High Speed AUTOSTORENOVRAM
OSC 5V SMT 7X5 CMOS
|
XICOR[Xicor Inc.]
|
| BUX11A |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR
|
General Electric Solid State
GESS[GE Solid State]
ETC
|
| BUX11 |
HIGH CURRENT, HIGH SPEED , HIGH POWER TRANSISTOR
|
Comset Semiconductor
|
| BTS640S2 BTS640S2G BTS640S2S Q67060-S6307-A5 Q6706 |
High Speed CMOS Logic Dual 4-Stage Static Shift Registers 16-SOIC -55 to 125 智能感知高端功率开
High Speed CMOS Logic Quad Bilateral Switches 14-PDIP -55 to 125
Smart Sense High-Side Power Switch
Smart High Side Switches - 5,0-34V, 30mΩ Limit(scr) 24A
|
INFINEON[Infineon Technologies AG]
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| TC4426A TC4426ACOA TC4426ACPA TC4426AEPA TC4427A T |
(TC4426A - TC4428A) 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS
Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:15-19 RoHS Compliant: No
1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS 1.5A的双高速功率MOSFET驱动
|
TELCOM[TelCom Semiconductor, Inc]
TELCOM[TelCom Semiconductor Inc]
TelCom Semiconductor, Inc.
|
