| PART |
Description |
Maker |
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| 5962F0152101QXC 5962F0152101VXC ISL74422ARHQF ISL7 |
Radiation Hardened 9A, Non-Inverting Power MOSFET Drivers BUF OR INV BASED MOSFET DRIVER, CDFP16
Radiation Hardened 9A. Non-Inverting Power MOSFET Drivers 辐射加固9A条。非反向功率MOSFET驱动
Power MOSFET Drivers, Rad-Hard, 9A, Non-Inverting
Radiation Hardened 9A/ Non-Inverting Power MOSFET Drivers
|
Intersil, Corp.
Intersil Corporation
|
| IRHM93130 IRHM9130 IRHM9130-15 |
Simple Drive Requirements
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
RADIATION HARDENED POWER MOSFET / 100V, P-CHANNEL
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package
|
IRF[International Rectifier]
|
| HCTS365MS HCTS365D HCTS365DMSR HCTS365HMSR HCTS365 |
Radiation Hardened Octal D-Type Flip-Flop/ Three-State/ Positive Edge Triggered
Radiation Hardened Hex Buffer/Line Driver Non-Inverting 辐射硬化六角缓冲线路驱动器非反相
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HS-RTX2010 HS-RTX2010RH HS8-RTX2010RH HS9-RTX2010R |
Radiation Hardened Real Time Express??Microcontroller
Radiation Hardened Real Time ExpressMicrocontroller 16-BIT, 8 MHz, MICROCONTROLLER, CQFP84
Radiation Hardened Real Time ExpressMicrocontroller 16-BIT, 8 MHz, MICROCONTROLLER, UUC84
Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-SOIC 0 to 70
Radiation Hardened Real Time Express Microcontroller
|
Advanced Analogic Technologies, Inc.
Intersil, Corp.
Intersil Corporation
|
| HS9-OP470ARH-Q HS-OP470AR HS-OP470ARH 5962R9853301 |
16 AMP SPDT MINIATURE POWER RELAY
Radiation Hardened, Very Low Noise
Quad Operational Amplifier(抗辐射低噪声四路运算放大
Radiation Hardened, Very Low Noise Quad Operational Amplifier
Radiation Hardened/ Very Low Noise Quad Operational Amplifier
|
Intersil Corporation
|
| HS-2600RH 5962D9567101VPC HS7B-2600RH-Q HS7-2600RH |
Radiation Hardened Wideband/ High Impedance Operational Amplifier
Radiation Hardened Wideband, High
Impedance Operational Amplifier(抗辐射宽带、高阻抗运算放大
CONNECTOR ACCESSORY
Radiation Hardened Wideband, High Impedance Operational Amplifier OP-AMP, 12 MHz BAND WIDTH, CDIP8
Radiation Hardened Wideband, High Impedance Operational Amplifier OP-AMP, 6000 uV OFFSET-MAX, CDIP8
|
Intersil Corporation
Intersil, Corp.
http://
|
| FSPYE230D1 FSPYE230F FSPYE230F4 FSPYE230R4 FN4852 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 12 A, 200 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| IRHNA7264SE |
250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package
RADIATION HARDENED POWER MOSFET
|
International Rectifier
|
| JANSR2N7498T2 IRHF57230SE |
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package
RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39) 抗辐射功率MOSFET的通孔（到39
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRH7450SE 2036 |
Simple Drive Requirements
RADIATION HARDENED POWER MOSFET
From old datasheet system
500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-204AA package
|
International Rectifier
|
