| PART |
Description |
Maker |
| AS5LC1008DCJ-12/IT AS5LC1008DCJ-12/XT AS5LC1008DJ- |
128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout
|
Austin Semiconductor, Inc
|
| AS5LC1008DJ-10_IT AS5LC1008DJ-10_XT AS5LC1008DJ-12 |
128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout
|
Austin Semiconductor
|
| AS7C31025A-10TJI AS7C31025A-10JI AS7C31025A-10TJC |
Parallel-Load 8-Bit Shift Registers 16-SOIC -40 to 85 128K X 8 STANDARD SRAM, 10 ns, PDSO32
Parallel-Load 8-Bit Shift Registers 16-TVSOP -40 to 85 128K X 8 STANDARD SRAM, 10 ns, PDSO32
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Alliance Semiconductor, Corp.
|
| GVT72512A8 |
REVOLUTIONARY PINOUT 512K X 8
|
Galvantech
|
| PDM31096SA8TTY PDM31096SA8TTR PDM31096SA8SOTR PDM3 |
4 megabit 3.3V static RAM 512K x 8-bit revolutionary pinout
|
PARADIGM
|
| IDT71128 IDT71128S12Y IDT71128S12YI IDT71128S15Y I |
Precision Adjustable (Programmable) Shunt Reference 8-SOIC -40 to 125
Precision Adjustable (Programmable) Shunt Reference 8-TSSOP -40 to 125
CMOS Static RAM 1 Meg (256K x 4-Bit) Revolutionary Pinout
256K x 4 Static RAM Center Pwr & Gnd Pinout
|
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存（5V工作），旋转引脚输出。在商用和工业温度范围操
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
128K x 8 high speed static RAM, 5V operating, 20ns
128K x 8 high speed static RAM, 5V operating, 15ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IDT71V124SA10PHG8 IDT71V124SA10TYG IDT71V124SA10TY |
3.3V 128K x 8 Statis RAM Center Power & Ground Pinout
|
IDT
|
| IS61VPS12836A-250B3I |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 128K X 36 CACHE SRAM, 2.6 ns, PBGA165
|
Integrated Silicon Solution, Inc.
|
| LH532000B LH532000BT |
CMOS 2M (256K x 8/128K x 16) MROM 200万的CMOS56 × 8/128K × 16MROM
LH532000BT CMOS 1M (128K x 8) Mask Programmable ROM 48-pin TSOP
|
Sharp, Corp.
Sharp Corporation
Sharp Electrionic Components
Sharp Electronics Corp.
|
| CY7C1019CV33 CY7C1019CV33-12VI CY7C1019CV33-15VC C |
128K x 8 Static RAM 128K的8静态RAM
JT 26C 26#20 SKT RECP 128K X 8 STANDARD SRAM, 8 ns, PDSO32
128K x 8 Static RAM 128K X 8 STANDARD SRAM, 12 ns, PDSO32
128K x 8 Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32
128K x 8 Static RAM 128K X 8 STANDARD SRAM, 10 ns, PDSO32
128K x 8 Static RAM 128K X 8 STANDARD SRAM, 8 ns, PDSO32
Memory : Async SRAMs
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
