| PART |
Description |
Maker |
| IXGQ100N60Y4 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C)
|
|
| CM200DY24E |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 200A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 200安培我（丙）
|
Vishay Intertechnology, Inc.
|
| CM100DY24H |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 100号A一（c
|
Toshiba, Corp.
|
| 2MBI100J120 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 100号A一c
|
Samsung Semiconductor Co., Ltd.
|
| DIM250PHM33-TS000-15 |
Half Bridge IGBT Module
|
Dynex Semiconductor
|
| GP350MHB06S |
Half Bridge IGBT Module
|
DYNEX[Dynex Semiconductor]
|
| SIM100D06AV1 |
“HALF-BRIDGE?/a> IGBT MODULE
“HALF-BRIDGE” IGBT MODULE
|
SemiWell Semiconductor
|
| DIM200WHS12-E000 |
Half Bridge IGBT Module
|
Dynex Semiconductor
|
| BSM200GB120DN2 200B12N2 C67070-A2300-A70 |
From old datasheet system
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BSM100GB170DN2 100B17N2 C67070-A2703-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
