| PART |
Description |
Maker |
| 2SC5397 |
TRANSISTOR FOR LOW FREQUENCY AMPLIFY, MEDIAM FREQUENCY AMPLIFY SILICON NPN EPITAXIAL TYPE MICRO
|
Isahaya Electronics Cor...
|
| 2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE.
Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corporation
|
| INA5002AP1 |
For low frequency power amplify Silicon PNP Epitaxial
|
Isahaya Electronics Corporation
|
| INC5001AP1 |
For low frequency power amplify Silicon NPN Epitaxial
|
Isahaya Electronics Corporation
|
| 2SD1447 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
Panasonic Semiconductor
|
| INC6005AP1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SA2027 |
SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION
|
Isahaya Electronics Corporation
|
| ISC3244AS1 |
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SA1282 2SA1282A |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SA1993 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO
|
ISAHAYA[Isahaya Electronics Corporation]
ETC[ETC]
|
| ISD1447AS1 |
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| ISA1284AS1 |
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
