| PART |
Description |
Maker |
| SGM2014 SGM2014AM |
GaAs N-channel Dual Gate MES FET
GaAs N-channel Dual Gate MES FET
|
SONY[Sony Corporation]
|
| SGM2014M SGM2014 |
From old datasheet system
GaAs N-channel Dual Gate MES FET
|
SONY[Sony Corporation]
|
| SGM2014AM |
GaAs N-channel Dual Gate MES FET
From old datasheet system
|
Sony
|
| CF739 Q62702-F1215 |
From old datasheet system
GaAs FET (N-channel dual-gate GaAs MES FET)
|
Siemens Semiconductor G...
Siemens Semiconductor Group
Infineon
SIEMENS AG
|
| 3SK206 |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD
|
NEC
|
| 3SK320 |
RF Dual Gate FETs
N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX)
|
Toshiba Semiconductor
|
| 3SK283 |
N CHANNEL DUAL GATE MES TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS)
N CHANNEL DUAL GATE MES TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 3SK274 E001715 |
From old datasheet system
N CHANNEL DUAL GATE MES TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| GN1022 |
GaAs N Channel MES Type IC
|
Matsushita Electric Works(Nais)
Panasonic Semiconductor
|
| NE722S01 NE722S01-T1 |
NECs C TO X BAND N-CHANNEL GaAs MES FET
|
California Eastern Labs
|
| NE650R279A NE650R279A-T1 |
0.2 W L, S-BAND POWER GaAs MES FET 0.2册，S波段功率GaAs场效应晶体管
0.2 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE960R575 NE960R500 NE960R5 NE961R500 NE962R575 |
0.5 W X, Ku-BAND POWER GaAs MES FET
0.5 W X Ku-BAND POWER GaAs MES FET
|
NEC[NEC]
|
