| PART |
Description |
Maker |
| AS7C3364PFD32-36BV.1.1 AS7C3364PFD36B-200TQIN AS7C |
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 3 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 3.5 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 3 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 4 ns, PQFP100
From old datasheet system
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| GS820E32AGT-133 |
64K x 32 2Mb Synchronous Burst SRAM 64K X 32 CACHE SRAM, 10 ns, PQFP100
|
GSI Technology, Inc.
|
| GS820E32AT GS820E32AT-180 GS820E32AT-180I GS820E32 |
64K x 32 2Mb Synchronous Burst SRAM
|
GSI[GSI Technology]
|
| GVT7164D18 7164D18S |
64K X 18 SYNCHRONOUS BURST SRAM
From old datasheet system
|
Galvantech
|
| CY7C1297A1-50AC CY7C1297A-50AC CY7C1297A-66AC GVT7 |
Memory : Sync SRAMs
64K X 18 Synchronous Burst SRAM
|
Cypress Semiconductor
|
| MCM67B618B MCM67B618BFN9 |
MCM67B618B 64K X 18 Bit BurstRAM Synchronous Fast Static RAM
64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write
From old datasheet system
|
Motorola, Inc
|
| IDT71V633S11PF IDT71V633S11PFI IDT71V633S12PFI IDT |
From old datasheet system
64K x 32 3.3V Synchronous SRAM Flow-Through Outputs Burst Counter, Single Cycle Deselect
3.3V 64K x 32 Static SRAM with Flow-Through Outputs
|
IDT[Integrated Device Technology]
|
| AS7C25512FT32_36A AS7C25512FT32A-10TQC AS7C25512FT |
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 36 STANDARD SRAM, 8.5 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 10 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 8.5 ns, PQFP100
DIODE ZENER SINGLE 1000mW 47Vz 5.5mA-Izt 0.05 5uA-Ir 35.8Vr DO41-GLASS 5K/REEL
Sync SRAM - 2.5V
2.5V 512K x 32/36 flowthrough burst synchronous SRAM
|
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
Alliance Semiconductor ...
|
| CY7C0430V 7C0430V CY7C0430V-133BGI CY7C0430V-133BG |
3.3V 64K x 18 Synchronous QuadPort⑩ Static RAM
3.3V 64K X 18 SYNCHRONOUS QUADPORT⒙ STATIC RAM
From old datasheet system
3.3V 64K x 18Synchronous QuadPort?Static RAM
|
CYPRESS[Cypress Semiconductor]
|
| T35L6432A T35L6432A-5T T35L6432A-5Q |
64K x 32 SRAM
0.5 to 4.6V; 1.6W; 64K x 32 SRAM: 3.3V supply, fully registered inputs and outputs, burst counter
|
TM Technology, Inc.
Taiwan Memory Technology
|
| CY7C1332 CY7C1331 7C1331 |
64K x 18 Synchronous Cache 3.3V RAM(3.3V 64K x 18 同步高速缓冲存储器 RAM) 64K的18同步高速缓.3V的内存电压（3.3V 64K的18同步高速缓冲存储器的RAM
From old datasheet system
64K x 18 SynchronousCache 3.3V RAM
|
Cypress Semiconductor Corp.
|
| WED2ZL361MV50BC WED2ZL361MV38BC WED2ZL361MV42BC WE |
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,5.0ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,5.0纳秒同步脉冲流水线静态随机存储器（无总线等待时间））
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,3.8ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.8纳秒同步脉冲流水线静态随机存储器（无总线等待时间））
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,4.2ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,4.2纳秒同步脉冲流水线静态随机存储器（无总线等待时间））
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,3.5ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.5纳秒同步脉冲流水线静态随机存储器（无总线等待时间））
|
Vicor, Corp.
|
