| PART |
Description |
Maker |
| CPH3307 |
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
N-Channel Silicon MOSFET
|
SANYO[Sanyo Semicon Device]
|
| 5LP01N |
Dual High Efficiency, Low Noise, Synchronous Step-Down Switching Regulators
P-Channel Silicon MOSFET for Ultrahigh-Speed Switching Applications(超高速转换应用的P沟道硅MOSFET)
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
Pico MOSFET Series
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Sanyo Semiconductor
|
| BF543 |
RF-MOSFET - VDS=15V, gfs=12mS, Gp=22dB, F=1dB
Silicon N-Channel MOSFET Triode
|
INFINEON[Infineon Technologies AG]
|
| C2M0045170P |
Silicon Carbide Power MOSFET C2M MOSFET Technology
|
Cree, Inc
|
| CPH5855 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| VEC2819 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| VEC2814 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| UP04979 |
Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2)
|
PANASONIC[Panasonic Semiconductor]
|
| CTLM7110-M832D |
SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER
|
Central Semiconductor Corp
|
| BF1005R BF1005W BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB
Silicon N-Channel MOSFET Tetrode 硅N沟道MOSFET四极
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| VEC2905 |
PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
