| PART |
Description |
Maker |
| HN1B01F |
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
| L8050HPLT1G11 L8050HPLT3G L8050HQLT1G L8050HRLT1G |
General Purpose Transistors NPN Silicon Epitaxial planar type.
|
Leshan Radio Company
|
| 2SC6120 2SC612010 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC4116 E000906 |
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| HN1B04FU E001969 |
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| HN1B01F E001967 |
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC4738 E000984 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| HN1B01FU07 |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC473807 |
Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| KTX402U |
EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (GENERAL PURPOSE, LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| 2SC5233 |
Transistor Silicon NPN Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
TOSHIBA
|
