| PART |
Description |
Maker |
| TH58V128FT |
128Mbit (16M x 8bit) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58V64BFT |
64-MBIT (8M x 8 BITS) CMOS NAND E2PROM
64-MBIT (8M 8 BITS) CMOS NAND E2PROM
|
TOSHIBA
|
| TC58NS128BDC |
128 MBit CMOS NAND EPROM
|
Toshiba
|
| TC5816BFT |
16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58V64ADC |
64-MBIT (8M X 8BITS) CMOS NAND E PROM (8M BYTE SmartMedia)
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58256FTI |
256-MBIT (32M x 8BITS) CMOS NAND EEPROM
|
Toshiba Semiconductor
|
| TC581282A TC581282AXB |
128-MBIT (16M 8 BITS) CMOS NAND E2PROM
128-MBIT (16M X 8 BITS) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| H27UAG8T2B |
16Gb (2048M x 8bit) NAND Flash
|
Hynix Semiconductor
|
| KM48V8104C KM48V8004C KM48V8104CK-45 KM48V8104CKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| TC58NS256ADC |
256-MBIT (32M x 8 BITS) CMOS NAND E PROM (32M BYTE SmartMedia)
|
TOSHIBA
|
| NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
ST Microelectronics
|
