| PART |
Description |
Maker |
| MIE-524H4 524H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| KEM5001R |
Infrared Emitting Diode(GaAlAs)
|
KODENSHI KOREA CORP.
|
| HE7601SG_06 HE7601SG06 |
GaAlAs Infrared Emitting Diode
|
OPNEXT[Opnext. Inc.]
|
| KLB-16AI-94 |
Infrared Emitting Diode(GaAlAs)
|
KODENSHI KOREA CORP.
|
| LTE-2871 |
Gaalas T-1 3/4 Modified Infrared Emitting Diode
|
Lite-On Technology
|
| TSHA6200 TSHA6202 TSHA620009 TSHA6201 TSHA6203 |
Infrared Emitting Diode, 875 nm, GaAlAs
|
Vishay Siliconix
|
| LTE4206 LTE-4206C LTE-4216 LTE-4216C |
GaAlAs T-1 Standard 3 Infrared Emitting Diode
|
Lite-On Technology Corporation
|
| LTE-2871 |
GaAlAs T-1 3/4 Modified Infrared Emitting Diode
|
LITE-ON ELECTRONICS INC
光宝科技股份有限公司
Lite-On Technology Corporation
|
| LN189M |
GaAlAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
| LN172 |
GaAlAs Infrared Light Emitting Diode
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
