| PART |
Description |
Maker |
| FQD17P06 FQU17P06 FQD17P06TF FQD17P06TM FQU17P06TU |
60V P-Channel MOSFET
60V P-Channel QFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQD7P06 FQU7P06 FQD7P06TF FQD7P06TM FQU7P06TU |
60V P-Channel MOSFET
60V P-Channel QFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQI50N06TU |
60V N-Channel QFET; Package: TO-262(I2PAK); No of Pins: 3; Container: Rail 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Fairchild Semiconductor, Corp.
|
| FQU20N06LTU |
60V N-Channel Logic level QFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 17.2 A, 60 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
Fairchild Semiconductor, Corp.
|
| FDD26AN06A0 |
60V N-Channel PowerTrench MOSFET 60V, 36A, 26mO
|
FAIRCHILD[Fairchild Semiconductor]
|
| HUFA75433S3ST HUFA75433S3S |
N-Channel UltraFET R MOSFETs 60V, 64A, 16mOhm
N-Channel UltraFET MOSFETs 60V/ 64A/ 16m
N-Channel UltraFET MOSFETs 60V, 64A, 16mз 64 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| FDD5612 |
2MM SOCKET STRIPS
60V N-Channel PowerTrench?/a> MOSFET
60V N-Channel PowerTrench⑩ MOSFET
60V N-Channel PowerTrench MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| IRFZ44VZ IRFZ44VZL IRFZ44VZS IRFZ44VZPBF |
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 60V的，的Rds（on）\u003d 12mohm，身份证\u003d 57A条）
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ
N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
|
Fairchild Semiconductor, Corp.
|
| NDT2955 NDT2955J23Z |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 2.5AI（四）|的SOT - 223
P-Channel Enhancement Mode Field Effect Transistor2.5A60V.3ΩP沟道增强型场效应管（漏电2.5A, 漏源电压-60V，导通电.3Ω
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
